Chapter/Page

Error Location

Error and Correction

Ch. 1, p. 11

Figure 1.10

Last two dates are reversed. They should be 2009 and 2012.

Ch. 2, p. 22

Figure 2.1

No "+" sign for atomic number of carbon. It should be C 6.

Ch. 2, p. 24

Figure 2.5

Add a negative sign, "-", to the dotted circle in the valence shell of the chlorine ion.

Ch. 2, p. 25

Figure 2.6

1) The dotted lines for Lanthanides and Actinides are not aligned properly and should be removed, 2) the correct spelling for element 43 is Technetium, and 3) the correct spelling for element 91 is Protactinium.

Ch. 2, p. 26

Definition of atomic mass number.

Atomic mass number: The sum of the protons and neutrons in an atom. Isotopes of the same element have the same number of protons but a different number of neutrons; therefore, isotopes have a different mass number.

Ch. 2, p. 28

Figure 2.10

The electron symbols (3x) should be changed to e^- with a superscripted "^-".

Ch. 2, p. 30

Formula for resistance, definition of area

For the definition of area, replace "= width x thickness" with "in cm²."

Ch. 2, p. 31

Figure 2.13

The electron notation requires a superscript negative sign: "e^-".

Ch. 2, p. 33

Second-to-last sentence in "Pure Silicon" section

Replace "window glass" with "a diamond." The sentence should read: "An example of a crystal material is a diamond." Note that glass is an amorphous solid and not a crystal.

Ch. 2, p. 39

Second-to-last paragraph, last sentence

Replace "Groups IIA and VIA" with "Groups IIB and VIA."

Ch. 3, p. 48

Figure 3.6

Label vertical axis of plot as "Charge distribution."

Ch. 3, p. 48

Third sentence of last paragraph

Replace "Note the breakdown voltage…" with "Note the forward conduction voltage…."

Ch. 4, p. 75

Table 4.2

Change the superscript for very lightly doped material to n^{- -} or p^{- -} (it requires 2 raised negative signs to signify "very lightly doped").

Ch. 4, p. 82

Midway through second paragraph, "wafer sawing."

Replace "Wafer sawing reduces" with "Wire saws reduce."

Ch. 4, p. 82

Second sentence of second-to-last paragraph on page

This sentence should read: "The final wafer thickness of a 300-mm wafer is currently specified at a thickness of 775 ± 25 microns."

Ch. 4, p. 83

Second paragraph (line 3 of page)

This is to clarify terminology of edge polish, edge grind and edge profile. The polished wafer edge (or edge polish) actually occurs after the etch process. An edge grind, also referred to as an edge profile, is done before etching.

Ch. 4, pages 85-86

Figures 4.27 and 4.28

The artwork in Figure 4.27 belongs with Figure 4.28. The artwork in Figure 4.28 does not apply to this topic and should not be used.

Ch. 4, p. 86

Sixth line from bottom of the page

Replace "grain structure" with "crystal structure."

Ch. 5, p. 97

First sentence at top of the page

Note that the more correct term for changing a vapor into a liquid is condensation.

Ch. 5, p. 99

Figure 5.12

Stress arrows should be redrawn to show tensile and compressive loads applied to a wafer under a bending load (compressive at the small wafer radius and tensile at the large wafer radius).

Ch. 5, p. 102

Figure 5.14

Indicator lines are not correctly drawn for labels "Chemical control and leak detection" and "Filter." The chemical control line drops down to point at the control box, and the filter line moves to left slightly to point at the filter.

Ch. 5, p. 108

Table 5.7

This table lists TEOS as a gas, but it is actually a liquid. (See page 271 for a description of TEOS.)

Ch. 6, p. 116

Figure 6.4

Below wafer on right side of Figure, delete the word "initial" at the beginning of the sentence.

Ch. 6, p. 136

Figure 6.27, (2) and (3)

Replace HO^- with OH^-.

Ch. 6, p. 137

Section on Modifications to RCA Clean

Note that lower temperatures for RCA clean are now common, even as low as 45° C.

Ch. 6, p. 137

Section on Piranha Mixture

Another common name for Piranha Clean is Caros Clean.

Ch. 7, p. 153

Denominator in Second line of sheet resistance equation.

There should be an "l" instead of "w":

Rs = r (l) / l x t

Ch. 7, p. 170

Figure 7.28

Replace the bottom "C_max" on the vertical axis with "C_min."

Ch. 9, p. 203

Figure 9.5

Electron notation requires a superscript for the negative sign: "e^- ".

Ch. 9, p. 205

List for CMOS manufacturing steps, #3 and #11.

Make the following changes:

Step #3: Poly Gate Structure Process

Step #11: Via-2 and Plug-2 Formation

Ch. 9, p. 210

Heading for Section 3

Replace "Poly Gate Structural Process" with "Poly Gate Structure Process."

Ch. 9, p. 211

Heading for Section 4

Delete "s" from Implants, making the title: "Lightly Doped Drain (LDD) Implant Process."

Ch. 9, p. 215

Process step 1 and Figure 9.21

Replace SiN₃ chemical symbol for nitride with Si₃N₄.

Ch. 9, p. 218

Heading for Step 11

Replace heading with "Via-2 and Plug-2 Formation."

Ch. 10, p. 235

Formula for rate of linear oxide growth

Replace the linear rate constant "(B/A hr)" with "(B/A)."

Ch. 10, p. 235

Diagram in Figure 10.11

This drawing should show in the interface region that oxygen and silicon atoms are bonded with two oxygen atoms attached to one silicon atom.

Ch. 11, p. 276

Chemical reaction equation for polysilicon deposition

Delete helium gas. The chemical reaction should read: SiH₄(g) ® Si(s) + 2H₂(g)

Ch. 11, p. 279

Two chemical reaction equations for PECVD nitride film

Remove all coefficients from these two chemical reactions, since the silicon nitride is non-stoichiometric. The reactions are:

SiH₄(g) + NH₃(g) ® Si_xN_yH_z(s) + H₂(g)

SiH₄(g) + N₂(g) ® Si_xN_yH_z(s) + H₂(g)

Ch. 12, p. 305

List of needs for copper

Correct the numbering scheme of the list to read from 1 through 5.

Ch. 12, p. 315

Figure 12.16

Electron notation requires superscript "-" sign: e^-.

Ch. 12, p. 316

Figure 12.17

The symbol for positive argon ion should read: Ar⁺.

Ch. 12, p. 317

Figure 12.18

There are two changes. Change 1) "+ ions" to "- ions", and 2) the electron symbol should have a superscript "^-".

Ch. 12, p. 321

Figure 12.22

There are three changes. Change 1) "+ Ar" to "Ar⁺" , 2) "+ Ti" to "Ti⁺", and 3) the electron symbol should have a superscript "-".

Ch. 12, p. 324

Reduction reaction equation for electroplating

The electron symbol is wrong (the "e" should not be superscripted). The reaction should read: Cu²⁺ + 2e^- ® Cu⁰

Ch. 13, p. 337

Heading for photo

Change the heading to read: "Photomask and Reticle for Microlithography."

Ch. 13, p. 342

first paragraph, Second-to-last sentence

The end of the sentence should refer to the "following two chapters", not three chapters.

Ch. 13, p. 359

Figure 13.27

Replace "cP" units with "cps."

Ch. 14, p. 369

Figure 14.2

Mask #3 needs reticle alignment marks.

Ch. 14, p. 372

Figure 14.6

Above the excimer laser heading, replace the 197 nm wavelength with 193 nm.

Ch. 14, p. 375

Table 14.3

Pulse Length should be changed to "Pulse Duration" or "Pulse Width."

Ch. 14, p. 375

Paragraph 2, sentence 3

Pulse length should be changed to "pulse duration" or "pulse width."

Ch. 14, p. 381

Figure 14.21

The image results should show a severely fuzzy circle image for "Bad" and a moderately fuzzy circle image for "Poor."

Ch. 14, p. 393

First paragraph, second-to-last sentence

Replace "25 x 33" with "26 x 33."

Ch. 16, p. 440

Figure 16.6

Remove "Bias" and the width of the resist box should continue to W_b.

Ch. 16, p. 443

Figure 16.11

The 2 curved arrows from molecules in the center of the diagram should point to a "l ."

Ch. 16, p. 446

Table 16.4

The bottom right arrow (for Physical Etch and Electrode Size) should point upwards.

Ch. 16, p. 448

Figure 16.16

Replace the frequency of the microwave source as 2.45 GHz.

Ch. 16, p. 449

Figure 16.17

Replace the frequency of the RF generator with 13.56 MHz.

Ch. 16, p. 452

Figure 16.20

Replace the frequency of the microwave source as 2.45 GHz.

Ch. 16, p. 458

Figure 16.27

Replace "SiN₃" for nitride with "Nitride."

Ch. 16, p. 468

Figure 16.34

There are 3 changes: 1) the two curved lines in the center of the drawing should point toward the symbol "l ", 2) in step 4, the "Os" should read "O", and 3) in step 4, the symbol "+O" should read "O⁺."

Ch. 17, p. 476

Figure 17.1

Some of the circled letters in the drawing are wrong. Replace the following circled letters in the drawing: 1) G with E, 2) H with F, 3) E with G and 4) F with H. Note that with these corrections, the letters correspond directly to the descriptions in Table 17.2.

Ch. 17, p. 483

Fourth sentence, first paragraph

Replace with: "The number of ions in the beam is related to the desired concentration of dopants to be introduced into the wafer."

Ch. 17, p. 486

Table 17.6

Under Description and Applications, for Low/Medium current, the 3^rd bullet should read: "Most often the wafer is stationary and the ion beam is scanned." For High Current, the 3^rd bullet should read: "Most often the ion beam is stationary and the wafer does the scanning."

Ch. 17, p. 489

Second-to-last paragraph, fourth sentence

Replace with these two sentences: "When BF₃ is used as the source of boron, many different ion species are generated in the ion source. These include B⁺, B₁₀⁺, B₁₁⁺, BF⁺, BF₂⁺, F⁺ and F₂⁺."

Ch. 17, p. 489

Last paragraph, first sentence

Replace with: "There are other designs for ion sources, such as RF (radio frequency) ion source, cold cathode source and microwave ion source."

Ch. 17, p. 492

Figure 17.16

The vertical axis needs to have 10¹⁶ and 10¹⁷ swapped (to make ascending order).

Ch. 17, p. 493

Second paragraph, titled "High-Current and High-Energy Beam"

Delete the Second-to-the-last sentence ("The linear accelerator…"). Add a new sentence at the end of the paragraph: "This added analysis magnet also aids in the removal of beam contaminants by removing masses other than the desired species."

Ch. 17, p. 495

First paragraph, titled "Electrostatic Scanning"

Add the following to the last sentence of this paragraph: "…, and to reduce channeling effects."

Ch. 17, p. 496

First paragraph, titled "Mechanical Scanning"

Delete fifth-to-the-last sentence ("Moving the wafers …"). Delete second-to-the-last sentence ("Throughput is better …").

Ch. 17, p. 499

Third paragraph, titled "Dose Control"

Delete "modern" in the first sentence. It should read: "In ion implanters, real-time dose …"

Ch. 17, p. 501

Fifth paragraph, titled "Channeling"

In the last sentence, delete the last 3 words "and lower diffusivity."

Ch. 17, p. 502

Third paragraph, titled "Preamorphization"

Change this sentence to read: "A technique for reducing channeling is preamorphization of the single-crystal silicon lattice with an electrically inactive species, usually Si⁺."

Ch. 18, p. 524

Figure 18.10

There are 3 changes: 1) represent the H₂O in the slurry with 1 oxygen and 2 hydrogen, 2) in step 2, change the HO to OH^-, and 3) the diagram for Si(OH)₄ should show the small hydrogen on the outside.

App. C, p. 615

Unit Conversions

For description of an angstrom, it should read : "An angstrom is a common unit of measure for film thickness in wafer fabrication."

App. C, p. 615

Table C.3

The SI Unit for 1 kWh of energy has an error (bottom right of the table). It should read 3.600 x 10³ kJ.

App. E, p. 621

Figure E.7

There are 2 major changes required:

1) The final chemical reaction arrow at the bottom-right of the drawing is wrong and should be replaced with a "+" (this is between PHS and H⁺).

2) Inside the protecting group at the bottom-left of the drawing, a third CH₃ should be added to the carbon.

Chapter/Page

Error Location

Correction

Ch. 1, p. 20

Website list

The correct acronym for Maricopa Advanced Technology Education Center is MATEC.

Ch. 2, p. 36

First sentence of page

The spelling for the noun "phosphorus" used in the first sentence should not have an "ous." FYI, note that when used as an adjective, such as "the phosphorous atom," there is an "ous."

Ch. 3, p. 44

Heading for photo

This photo heading should read: "Components on a Printed Circuit Board."

Ch. 3, p. 44

Last sentence of first paragraph

Replace "…as illustrated on page 30" with "as described on Pages 60-62."

Ch. 4, p. 74

First sentence of second paragraph

The word "objective" is misspelled and needs an "i."

Ch. 5, p. 108

Table 5.7

Under "Example of Use" for nitrogen trifluoride, replace "icons" with "ions."

Ch. 6, p. 118

Figure 6.5

The word "transistor" is misspelled — it requires an "s."

Ch. 6, p. 121

Photo

There should be an additional credit line that reads "James Minor, photographer, Ó 1990."

Ch. 7, p. 152

Table 7.2

There should be an "*" next to Diffusion (signifying that the note at the bottom of the table applies only to the diffusion column).

Ch. 8, p. 192

First sentence, second paragraph

Add closing parenthesis to "(PECVD)"

Ch. 9, p. 207

First sentence, first paragraph of Section 2

Delete the word "is" after "alternative method"

Ch. 10, p. 231

First sentence following Wet Oxidation heading

Add a space between "the" and "oxidation."

Ch. 10, p. 231

Second sentence, last paragraph

Add a space between "as" and "pyrogenic steam."

Ch. 11, p. 258

Heading for Figure 11.1

Replace NMOS with nMOS.

Ch. 11, p. 283

Table 11.4, remarks for HSQ

Replace FOX with FOx.

Ch. 12, p. 308

Last sentence of last paragraph on the page

Delete hyphen in "high-aspect." This should read "high aspect ratio gaps"

Ch. 15, p. 419

Second sentence, second paragraph of section "Chemically Amplified DUV Resists"

Add space between "is" and "because."

Ch. 16, p. 453

Figure 16.22

The source should read (Pennington, NJ: The Electrochemical Society, 1996).

Ch. 17, p. 476

Table 17.2

Under the remarks column for section E and F, the spelling of the noun phosphorus is incorrect. It should be "phosphorus."

Ch. 17, p. 502

First paragraph, first sentence

Add "to" after photoresist mask.

Ch. 18, p. 530

Last line on this page

Add space between "or optical."

Ch. 18, p. 532

Second sentence of first paragraph

Replace this sentence with: "The conventional head on older tools was not able to apply…."

App. A, p. 601

Hazard list

The spelling of pyrophoric gas is incorrect.

App. E, p. 618

Third sentence, second paragraph

Add "s" to the word consist.